Irhys9a97034cm
Webirhys9a97034cm; prf19500ss780; KAMAKA Electronic Bauelemente Vertriebs GmbH . Ulmer Straße 130 73431 Aalen Germany. Phone: (0 73 61) 96 62-0 Fax: (0 73 61) 96 62 29. …
Irhys9a97034cm
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Web.SUBCKT irhys9a97034cm 1 2 3 ***** * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE ... WebThe IRHYS9A7130CM from Infineon Technologies is a Space Qualified MOSFETs with Continous Drain Current 30 A, Drain Source Resistance 35 milliohm, Drain Source Breakdown Voltage 100 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IRHYS9A7130CM can be seen below. Product …
WebHow many inches in a centimeter. One centimeter is equal to 0.3937 inches: 1cm = 1cm / 2.54cm/in = 0.3937in. WebIRHYS9A93034CM 概要 Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 300 krad(Si) TID, COTS Features Single event effect (SEE) hardened Improved SOA for linear mode operation Improved avalanche energy Low RDS(on) Simple drive requirements Electrically isolated Hermetically sealed Ceramic …
WebIRHYS9A97034CM Transistor MOSFET P-Channel 60V 30A 3-Pin TO-257AA Manufacturer: Infineon Product Category: Avnet Manufacturer Part #: IRHYS9A97034CM Compare … WebThe IRHYS9A97034CM from Infineon Technologies is a MOSFET with Continous Drain Current -30 A, Drain Source Resistance 46 milliohm, Drain Source Breakdown Voltage -60 …
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WebIRHYS9A97034CM -60 P 20 0.046 TO-257AA low ohmic JANS 2N7659T3 TBD* Product brief R9 rad hard MOSFET technology Higher performance & efficiencies with low risk design reuse Published by International Rectifier HiRel Products, Inc. … köpa hus thailandWebNXP Semiconductors PCA9703PW/Q900,118 GPI Shift Register 24-Pin TSSOP T/R - Tape and Reel (Alt: PCA9703PW/Q900,118) mandarin stone weybridge opening hoursWebThe IRHYS9A7234CM from Infineon Technologies is a Space Qualified MOSFETs with Continous Drain Current 17 A, Drain Source Resistance 110 milliohm, Drain Source Breakdown Voltage 250 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 2 to 4 V. Tags: Through Hole. More details for IRHYS9A7234CM can be seen below. … kopak coffeeWebTrameto - Trameto Unveils Platform for Prototyping Ambient Micro-Energy Harvesting - Sep 16, 2024; Cosel - COSEL Introduces DIN Rail Power Supplies for Industrial Applications - Sep 16, 2024; Sensata Technologies to Introduce Battery Management System at the Battery Show 2024 - Sep 16, 2024; AIXTRON Launches G10-SiC 200 mm Product Solution for … mandarin stone weybridge surreyWebirhy datasheet, cross reference, circuit and application notes in pdf format. mandarin stone shower traysWebIRHYS9A7234CM, IRHYB9A7234CM 6 of 15 2024-05-09 Radiation Hardened Power MOSFET Thru-Hole (TO-257AA) Device Characteristics 2.4.2 Single vent ffects – Safe Operating … mandarin stone tumbled marbleWebSep 22, 2024 · IRHYS9A93034CM 综述 指标参数 文件 订单 包装 支持 Rad hard, -60V, -30A, single, P-channel MOSFET, R9 in a TO-257AA Low Ohmic package - TO-257AA Low Ohmic, 300 krad (Si) TID, COTS Features Single event effect (SEE) hardened Improved SOA for linear mode operation Improved avalanche energy Low RDS (on) Simple drive requirements … mandarin stone showroom